RF Circuits for 5g Applications

RF CIRCUITS FOR 5G APPLICATIONSThis book addresses FinFET-based analog IC designing for fifth generation (5G) communication networks and highlights the latest advances, problems, and challenges while presenting the latest research results in the field of mmwave integrated circuits designing.The wireless communication sector is experiencing exponential expansion, particularly in the areas of mobile data and the 5G mobile network, creating fresh market possibilities for designing the integrated circuits (ICs) needed in the industry. Drawing from scientific literature and practical realization, this book explores FinFET-based analog IC designing for 5G communication networks and considers the latest breakthroughs and obstacles. It also presents the recent research trends and future roadmaps for the 5G communication circuits.RF Circuits for 5G Applications includes design guidelines to be considered when designing these circuits and detrimental scaling effects of the same. In addition, to enhance the usability of this book, the editors have included real-time problems in RFIC designing and case studies from experimental results, as well as clearly demarcated design guidelines for the 5G communication ICs designing.AudienceThe primary target audience includes researchers, postgraduate students, and industry professionals pursuing specializations in RF engineering, electronics engineering, electrical engineering, information, and communication technology.

Preface xvPart I: 5G Communication 11 Needs and Challenges of the 5 th Generation Communication Network 3Anamika Raj, Gaurav Kumar and Sangeeta Singh1.1 Introduction 31.1.1 What is 5G and Do We Need 5G? 51.1.2 A Brief History of Gs 61.2 mmWave Spectrum, Challenges, and Opportunities 81.3 Framework Level Requirements for mmWave Wireless Links 111.4 Circuit Aspects 121.5 Outline of the Book 14Acknowledgement 15References 152 5G Circuits from Requirements to System Models and Analysis 19Vipin Sharma, Rachit Patel and Krishna Pandey2.1 RF Requirements Governed by 5G System Targets 192.2 Radio Spectrum and Standardization 202.3 System Scalability 212.4 Communication System Model for RF System Analysis 222.5 System-Level RF Performance Model 232.5.1 Transmitter, Receiver, Antenna Array and Transceiver Architectures for RF and Hybrid Beamforming 242.6 Radio Propagation and Link Budget 242.6.1 Radio Propagation Model 242.6.2 Link Budgeting 252.7 Multiuser Multibeam Analysis 262.8 Conclusion 28Acknowledgement 29References 293 Millimetre-Wave Beam-Space MIMO System for 5G Applications 31G. Indumathi, J. Roscia Jeya Shiney and Shashi Kant Dargar3.1 Introduction 323.2 Beam-Space Massive MIMO System 343.2.1 System Model 363.2.2 Saleh-Valenzuela Channel Model 373.3 Array Response Vector 373.3.1 mmWave Beam-Space Massive (mWBSM)-MIMO System 383.4 Discrete Lens Antenna Array 393.5 Beam Selection Algorithm 423.6 Mean Sum Assignment-Based Beam User Association 453.6.1 Performance Evaluation 463.7 Conclusion 49References 49Part II: Oscillator & Amplifier 534 Gain-Bandwidth Enhancement Techniques for mmWave Fully-Integrated Amplifiers 55Shalu C., Shakti Sindhu and Amitesh Kumar4.1 RLC Tank 564.1.1 RC Low-Pass (LP) Filter 564.1.2 RLC Band-Pass (BP) Filter 564.2 Coupled Resonators 574.2.1 Bode-Fano (B-F) Limit 574.2.2 Capacitively Coupled Resonators 594.2.3 Inductively Coupled Resonators 604.2.4 Magnetically Coupled Resonators 604.2.5 Magnetically and Capacitive Coupled Resonator 614.2.6 Coupled Resonators Comparison 624.3 Resonators Based on the Transformers 634.3.1 On the Parasitic Interwinding Capacitance 634.3.2 Effect of Unbalanced Capacitive Terminations 644.3.3 Frequency Response Equalization 654.3.4 On the Parasitic Magnetic Coupling in Multistage Amplifiers 664.3.5 Extension to Impedance Transformation 674.3.6 On the kQ Product 674.3.7 Transformer-Based Power Dividers (PDs) 684.3.8 Transformer-Based Power Combiners (PCs) 694.4 Conclusion 69Acknowledgments 70References 705 Low-Noise Amplifiers 73Jyoti Priya, Sangeeta Singh and Bambam Kumar5.1 Introduction 735.2 Basics of RFIC 755.2.1 Voltage Gain in dB 755.2.2 Power Gain in dB 755.2.3 Issues in RF Design 755.3 Structure of MOSFET 815.4 Bandwidth Estimation Techniques 845.5 Noise 885.5.1 Noise in MOSFET 895.6 Different Topologies of LNA 92Conclusion 103Acknowledgement 103References 1046 Mixer Design 107Brajendra Singh Sengar and Amitesh Kumar6.1 Introduction 1076.2 Properties 1096.3 Diode Mixer 1146.4 Transistor Mixer 1166.5 Conclusion 119Acknowledgement 119References 1197 RF LC VCOs Designing 123M. Sankush Krishna, Madhuraj Kumar, Neelesh Pratap Singh and Anjan Kumar7.1 Introduction 1247.1.1 Basic VCO Models 1247.1.2 Phase Noise 1257.1.3 Flicker Noise 1267.1.4 Distributed Oscillators 1287.2 Tuning Extension Techniques 1297.2.1 Varactor 1297.2.2 Switched Capacitors 1307.2.3 Switched Inductors 1317.2.4 Switched TLs 1327.2.5 4th Order Tanks and Other Techniques 1327.3 Conclusion 133Acknowledgement 133References 1348 RF Power Amplifiers 137Anchal Tyagi, Rachit Patel and Krishna Pandey8.1 Specification 1378.1.1 Efficiency 1388.1.2 Generic Amplifier Classes 1388.1.3 Heating 1398.1.4 Linearity 1398.1.5 Ruggedness 1408.2 Bipolar PA Design 1408.3 CMOS Power Amplifier Design 1428.3.1 Performance Parameters 1438.3.1.1 Linearity 1438.3.1.2 Gain 1438.3.1.3 Efficiency 1448.3.1.4 Output Power 1448.3.1.5 Power Consumption 1448.3.2 Drawbacks of CMOS Power Amplifier 1448.3.3 Design of CMOS Power Amplifier 1458.3.3.1 Common Cascode PA Design 1458.3.3.2 Self-Bias Cascode PA Design 1468.3.3.3 Differential Cascode PA Design 1478.3.3.4 Power Combining PA Design 1478.4 Linearization Principles: Predistortion Technique, Phase-Correcting Feedback, Envelope Elimination and Restoration (EER), Cartesian Feedback 1488.4.1 Predistortion Linearization Technique 1488.4.2 Phase Correcting Feedback Technique 1508.4.3 Cartesian Feedback Technique 1518.4.4 Envelope Elimination and Restoration Technique 152Acknowledgement 154References 1549 RF Oscillators 157Pramila Jakhar and Amitesh Kumar9.1 Introduction 1579.2 Specifications 1599.2.1 Frequency and Tuning 1599.2.2 Tuning Constant and Linearity 1599.2.3 Power Dissipation 1609.2.4 Phase to Noise Ratio 1609.2.5 Reciprocal Mixing 1609.2.6 Signal to Noise Degradation of FM Signals Spurious Emission 1619.2.7 Harmonics, I/Q Matching, Technology and Chip Area 1619.3 LC Oscillators 1629.3.1 Frequency, Tuning and Phase Noise Frequency Tuning Phase Noise to Carrier Ratio 1639.3.2 Topologies 1649.3.3 NMOS Only Cross-Coupled Structure 1649.3.4 RC Oscillators 1659.4 Design Examples 1679.4.1 830 MHz Monolithic LC Oscillator Circuit Design Measurements 1679.4.2 A 10 GHz I/Q RC Oscillator with Active Inductors 1679.5 Conclusion 168Acknowledgement 168References 169Part III: RF Circuit Applications 17110 mmWave Highly-Linear Broadband Power Amplifiers 173Shalu C., Shakti Sindhu and Amitesh Kumar10.1 Basics of PAs 17310.1.1 Single Transistor Amplifier 17310.1.2 Trade-Offs Among Power Amplifier Design Parameters (P 0 , PAE and Linearity) 17410.1.3 Harmonic Terminations and Switching Amplifiers 17510.1.4 Challenges at Millimeter-Wave 17710.2 Millimeter Wave-Based AB Class PA 17710.2.1 Efficiency at Power Back-Off 17810.2.2 Sources of AM-PM Distortion 17810.2.3 Distortion Cancellation Techniques 17910.2.3.1 Input PMOS Varactors 17910.2.3.2 Complementary N-PMOS Amplifier 18010.2.3.3 Degeneration Inductance 18010.2.3.4 Harmonic Traps 18010.3 Design Example: A Highly Linear Wideband PA in 28 nm CMOS 18110.3.1 Transformer-Based Output Combiner and Inter-Stage Power Divider 18210.3.2 More on the kQ Product 18310.4 Conclusion 185Acknowledgments 185References 18611 FinFET Process Technology for RF and Millimeter Wave Applications 189A. Theja, Vikas A., Meena Panchore and Kanchan Cecil11.1 Evaluation of FinFET Technology 18911.1.1 Steps of Fabrication and Process Flow of FinFET Technology 19111.1.2 Digital Performance 19311.1.3 Analog/RF Performance 19511.2 Distinct Properties of FinFET 19711.2.1 Performance with Transistor Scaling 19811.2.2 Nonlinear Gate Resistance by Three Dimensional Structure 19911.2.3 Self-Heating Effect in FinFETs 20211.3 Assessment of FinFET Technology for RF/mmWave Applications 20311.3.1 RF Performance 20413.3.1.1 Parasitic Extraction 20611.3.2 Noise Performance 20811.3.3 Noise Matching with Gain at the mmWave Frequency 21011.4 Design Process of FinFET for RF/mmWave Performance Optimization 21111.4.1 Cascaded Chain Design Consideration for Wireless System 21211.4.2 Optimization of Noise Figure with G max for LNA Within Self-Heat Limit 21311.4.3 Gain Per Power Efficiency 21511.4.4 Linearity for Gain and Power Efficiency 21711.4.5 Neutralization for mmWave Applications 219References 22012 Pre-Distortion: An Effective Solution for Power Amplifier Linearization 223Gaurav Bhargava and Shubhankar Majumdar12.1 Introduction 22312.2 Standard Measures of Nonlinearity of Power Amplifier 22412.2.1 Gain Compression Point (1 dB) 22512.2.2 Harmonic and Intermodulation Distortion (IMD) 22512.2.3 Third-Order Intercept Point (TOI) 22712.2.4 AM/AM and AM/PM Distortion 22712.2.5 Adjacent Channel Power Ratio (ACPR) 22812.2.6 Error Vector Magnitude (EVM) 22912.3 What is Linearization? 23012.3.1 Feed Forward Linearization 23012.3.2 Feedback Linearization 23112.3.3 Pre-Distortion Linearization 23112.4 Example of Analog Pre-Distortion-Based Class EFJ Power Amplifier 234Conclusion and Future Scope 237References 23813 Design of Control Circuit for Mitigation of Shadow Effect in Solar Photovoltaic System 241Dhvanit Bhavsar, Shubham Bhatt, Siddhi Vinayak Pandey and Alok Kumar Singh13.1 Introduction 24213.2 Proposed Methodology 24613.3 Results and Discussion 26013.4 Conclusion 263Acknowledgement 263References 264Part IV: RF Circuit Modeling 26714 HBT High-Frequency Modeling and Integrated Parameter Extraction 269Ashish Bhatnagar and Rachit Patel14.1 HBT High-Frequency Modeling and Integrated Parameter Extraction 26914.2 High-Frequency HBT Modeling 27014.2.1 DC and Small Signal Models 27114.2.2 Linearized T-Model 27214.2.3 Linearized Hybrid pi model 27214.3 Integrated Parameters Extraction 27514.3.1 Formulation of Integrated Parameter Extraction 27514.3.2 Optimization of Model 27614.4 Noise Model Validation 27614.5 Parameters Extraction of an HBT Model 276Acknowledgement 277References 27715 Non-Linear Microwave Circuit Design Using Multi-Harmonic Load-Pull Simulation Technique 279Veral Agarwal and Rachit Patel15.1 Introduction 27915.2 Multi-Harmonic Load-Pull Simulation Using Harmonic Balance 28015.2.1 Formulation of Multi-Harmonic Load-Pull Simulation 28015.2.2 Systematic Design Procedure 28115.3 Application of Multiharmonic Load-Pull Simulation 28215.3.1 Narrowband Power Amplifier Design 28215.3.2 Frequency Doubler Design 285References 28716 Microwave RF Designing Concepts and Technology 289Madhu Raj Kumar and Neelesh Pratap Singh16.1 Introduction 28916.1.1 Gain 29016.1.2 Noise 29016.1.3 Non Linearity 29116.1.4 Sensitivity 29516.2 Microwave RF Device Technology and Characterization 29616.2.1 Characterization and Modeling 29616.2.2 Modeling 29616.2.3 Cut-Off Frequency 29816.2.4 Maximum Oscillation Frequency 29916.2.5 Input Limited Frequency 30116.2.6 Output Limited Frequency 30116.2.7 Maximum Available Frequency 30216.2.8 Technology Choices 30216.2.9 Double Poly Devices 30316.3 Passive Components 30316.3.1 Resistors 30416.3.2 Capacitors 30416.3.3 Inductors 307Conclusion 309Acknowledgement 309References 309Index 313